Fermi level modulation of boron nitride nanosheets by vacancy driven compressive strain

The compressive strain induced work function modulation in boron nitride nanosheets (BNNS) has been studied. arose due to the irradiation of 30 keV Au beam on thin films BNNS. Before BNNS was characterized by Raman spectroscopy, UV-Vis where using Tauc plot bandgap chemically synthesized from commercial hBN powder calculated as well layer numbers also quantified an empirical relation exploiting full width at half maxima (FWHM) peak Scanning Electron Microscopy (SEM) images were taken like structure pristine sample is visible and irradiation-induced changes terms irregular dots samples witnessed. X-Ray Diffraction (XRD) used characterize corresponding (002) plane depicted shifting higher angle which indicates visible. Finally, possible explanation formation discussed SRIM-2013 MC simulations. We've explained that vacancy induces materials lower (WF). Kelvin Probe (SKPM) map surface BNNS, it turned out WF lowers with increasing dose ions. value values results are qualitatively agreeing XRD results.